PART |
Description |
Maker |
IH5019 IH5019CDD IH5019CDE IH5019CPA IH5019CPD IH5 |
Virtual Ground Analog Switch Virtual Ground Analog Switch 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDIP8 Virtual Ground Analog Switch 4-CHANNEL, SGL ENDED MULTIPLEXER, CDIP14 Virtual Ground Analog Switch 4-CHANNEL, SGL ENDED MULTIPLEXER, PDIP14 Virtual Ground Analog Switch 虚拟地面模拟开 RES, 1206, TF, 1R, 5%, 1/4W 虚拟地面模拟开 RES, 2K OHM 1% 1/8W DSUB 17W5 F PCB G50 3-channel; 30V; 10mA; 500mW; virtual ground analog switch
|
Intersil, Corp. INTERSIL[Intersil Corporation] Harris Semiconductor
|
AM41DL6408G AM41DL6408G70IS AM41DL6408G70IT AM41DL |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices] SPANSION[SPANSION]
|
AM41PDS3228DB11IS AM41PDS3228DB10IS AM41PDS3228DB1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
AM42DL16X4D AM42DL1614DB85IT AM42DL1614DT85IT AM42 |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices] SPANSION[SPANSION]
|
AM49DL6408H70IS AM49DL6408H55FT AM49DL6408H85FS AM |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (512 K x 16-Bit) SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
|
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http:// SAMSUNG SEMICONDUCTOR CO. LTD.
|
AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位56亩16位),静态存储器
|
Advanced Micro Devices, Inc.
|
A82DL32X4T |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only Simultaneous Operation Flash Memory
|
AMIC Technology
|
HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262, 144-Word x 16-Bit Dynamic Random Access Memory x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor] ITT, Corp.
|